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UTC MPSH10 A
RF TRANSISTOR
DESCRIPTION
NPN EPITAXIAL SILICON TRANSISTOR
The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver.
1
TO-92
1: BASE 2: EMITTER 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25C )
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation Collector current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Pc Ic Tj TSTG
RATINGS
30 25 3 350 50 150 -55 ~ +150
UNIT
V V V mW mA C C
ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter on voltage DC current gain Output capacitace Current gain bandwidth product
SYMBOL
TEST CONDITIONS
MIN
30 25
TYP
MAX
UNIT
V V V nA nA mV mV pF MHZ
BVCBO Ic=100A BVCEO Ic=1mA BVEBO IE=10A ICBO VCB=25V IEBO VEB=2V VCE(SAT) IC=4mA,IB=400A VBE(ON) VCE=10V,IC=4mA hFE VCE=10V,IC=4mA Cob VCB=10V,f=1MHZ fT VCE=10V,IC=4mA,f=100MHZ
3 100 100 500 950 60 0.7 650
CLASSIFICATION OF hFE
RANK RANGE A 60-100 B 90-130 C 120 -200
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-065,A
UTC MPSH10 A
Typical Characteristics
hFE - TYPICAL PULSED CURRENT GAIN
NPN EPITAXIAL SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs Collector Current
=10
Typical Pulsed Current Gain vs Collector Current VCE=5V 80 60 40 20 0 0.1 125 25 -40 VCESAT - COLLECTOR-EMITTER VOLTAGE(V)
100
0.2
0.15 125 0.1 25
0.05
-40
0.2
0.5
1
2
5
10
20
50
Ic - COLLECTOR CURRENT (mA)
0.1
1 10 Ic - COLLECTOR CURRENT (mA)
20
VBE(ON) - BASE EMITTER ON VOLTAGE(V)
VBESAT - BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current 1 =10 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 1 10 Ic - COLLECTOR CURRENT (mA) 20 -40 25 125
Base - Emitter ON Voltage vs Collector Current 1 VCE=5V 0.8 25 0.6 125 -40
0.4
0.2 0.01
0.1
1
10
100
Ic - COLLECTOR CURRENT (mA)
ICBO - COLLECTOR CURRENT (nA)
10 VCB=30V
PD - POWER DISSIPATION (mW)
Collector-Cutoff Current vs Ambient Temperature
Power Dissipation vs Ambient Temperautre 350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE () 125 150
1
0.1
25
125 50 75 100 TA - AMBIENT TEMPERATURE ()
150
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-065,A
UTC MPSH10 A
Yib - INPUT ADMITTANCE (mmhos) 120 80 40 0 -40 -80 -120 0 bib VCE=10V Ic=5mA
NPN EPITAXIAL SILICON TRANSISTOR
Yob - OUTPUT ADMITTANCE (mmhos) 12 10 8 6 4 2 0 100 200 500 bob gob VCE=10V Ic=5mA Output Admittance
Input Admittance
gib
200
500
1000
1000
f - FREQUENCY (MHz)
f - FREQUENCY (MHz)
Yfb - FORWARD ADMITTANCE (mmhos)
Yrb -REVERSE ADMITTANCE (mmhos)
120 80 40 0
Forward Transfer Admittance 8 bfb
Reverse Transfer Admittan VCE=10V Ic=5mA
6
4 -brb 2 -grb 0 0 500 200 f - FREQUENCY (MHz) 1000
gfb -40 -80 0 200 500 f - FREQUENCY (MHz) VCE=10V Ic=5mA 1000
-120
24 20 16 12 VCE=10V Ic=2mA
Yoe - OUTPUT ADMITTANCE (mmhos)
Yie - INPUT ADMITTANCE (mmhos)
Input Admittance
Output Admittance 6 5 4 3 2 1 goe 0 0 200 500 f - FREQUENCY (MHz) 1000 boe VCE=10V Ic=2mA
gie
bie 8 4 0 0 200 500 f - FREQUENCY (MHz) 1000
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R201-065,A
UTC MPSH10 A
Yfe - FORWARD ADMITTANCE (mmhos) 60 40 20 0 -20 -40 -60 100 bfe gfe
NPN EPITAXIAL SILICON TRANSISTOR
Yre - REVERSE ADMITTANCE (mmhos) 1.2 1 0.8 0.6 0.4 0.2 0 0 -gre 500 200 f - FREQUENCY (MHz) 1000 Reverse Transfer Admittance VCE=10V Ic=2mA VCE=10V Ic=2mA
Forward Transfer Admittance
-bre
200 500 f - FREQUENCY (MHz)
1000
Test Circuits
2.0k 10k Vcc=12V 1000pF
1000pF 0.8-10pF
100pF L2 T1 2.0pF 0.8-10pF
L1-L3 turns No.16 wire,1/2 inch Lx 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No.14 wire,1 inch Lx inch ID T1 - Pri.1 turn No.16 wire Sec.1 turn No.18 wire
Input 50k
1000pF L1
TUM 5.0-18pF 1000pF 680 1000pF VBB
FIGURE 1:Neutralized 200 MHz PG and NF Circuit
50pF (NOTE 2) 175pF 500mHz Output into 50
RFC 1000pF 2.2k
(NOTE 1) 1000pF
NOTE 1:2 turns No.16 AW G wire,3/8 inch OD,11/4 inch long NOTE 2:9 turns No,22 AW G wire,3/16 inch OD,1/2 inch long
RFC
-Vee
Vcc FIGURE 2:500 MHz Oscillator Circuit
UTC
UNISONIC TECHNOLOGIES CO. LTD
4
QW-R201-065,A
UTC MPSH10 A
Test Circuits
NPN EPITAXIAL SILICON TRANSISTOR
2.0k 10k
Vcc=12V 1000pF
1000pF 0.8-10pF
100pF L2 T1 2.0pF 0.8-10pF
L1-L3 turns No.16 wire,1/2 inch Lx 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No.14 wire,1 inch Lx inch ID T1 - Pri.1 turn No.16 wire Sec.1 turn No.18 wire
Input 50k
1000pF L1
TUM 5.0-18pF 1000pF 680 1000pF VBB
FIGURE 1:Neutralized 200 MHz PG and NF Circuit
50pF (NOTE 2) 175pF 500mHz Output into 50
RFC 1000pF
(NOTE 1) 1000pF
NOTE 1:2 turns No.16 AW G wire,3/8 inch OD,11/4 inch long NOTE 2:9 turns No,22 AW G wire,3/16 inch OD,1/2 inch long
RFC
-Vee
Vcc FIGURE 2:500 MHz Oscillator Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
5
QW-R201-065,A

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